标题: 上海科技大学物质科学与技术学院系统材料学王宏达 [打印本页] 作者: huatai 时间: 2017-8-19 09:27 标题: 上海科技大学物质科学与技术学院系统材料学王宏达 王宏达 助理教授、研究员
研究方向 二维层状材料，纳米复合材料，热电材料，化合物半导体，微纳结构制造技术
联系方式 htwang@@shanghaitech.edu.cn
教育背景
1999年6月，获得台湾成功大学化学工程专业学士学位
2001年6月，获得台湾成功大学化学工程专业硕士学位
2008年5月，获得美国弗罗里达大学化学工程专业博士学位
2003年-2004年，台湾半导体制造公司任工程师
2008年-2011年，美国加州大学伯克利分校化学系从事博士后研究
2011年-2016年，美国阿拉巴马大学化学与生物工程系任助理教授
2016年8月，加入上海科技大学物质科学与技术学院，任助理教授
研究介绍
(1) Bi2Te3二维纳米薄片的弹性行为和热电行为，(2)纳米线/高分子聚合物复合材料之热电行为，(3)以离子液体剥离Bi2Te3，(4)纳米多孔材料的热电行为，(5)微制造多喷嘴与其电喷雾应用，(6)化合物半导体之化学和生物传感器 。
科研成果
1. M. Mathews, H.-T. Wang and L. Li,* “Finite element analysis of nanoindentation and elastic behavior of Bi2Te3 two-dimensional nanosheets,” ECS Journal of Solid State Science and Technology (Focus Issue on Properties, Devices, and Applications Based on 2D Layered Materials), vol. 5 (11), Q3082-Q3087, 2016.
2. H. Yan, C. Vajner, M. Kuhlman, L. Guo, L. Li, P. T. Araujo, and H.-T. Wang,* “Elastic behavior of Bi2Se3 2D nanosheets grown by van der Waals epitaxy,” Applied Physics Letters, vol. 109, pp. 032103, 2016.
3. C. Vajner,# H. Yan,# L. Guo, M. Mathews, M. Kuhlman, S. Benefield, P. Kung, L. Li, P. T. Araujo, and H.-T. Wang,* “Thickness identification of epitaxial Bi2Te3 via optical contrast,” 2D Materials, vol. 3(2), 021010, 2016.
4. J. Lim,# H.-T. Wang,# J. Tang, S. C. Andrews, J. Lee, D. H. Lee, T. P. Russell, and P. Yang,* “Simultaneous thermoelectric property measurement and incoherent phonon transport in holey silicon,” ACS Nano, vol. 10 (1), pp.124-132, 2016.
5. L. Guo, H. Yan, Q. Moore, M. Buettner, J. Song, L. Li, P. T. Araujo, and H.-T. Wang,* “Elastic properties of van der Waals epitaxy grown bismuth telluride 2D nanosheets,” Nanoscale, vol. 7, pp. 11915-11921, 2015.
6. T. Ludwig, L. Guo, P. McCrary, Z. Zhang, H. Gordon, H. Quan, M. Stanton, R. M. Frazier, R. D. Rogers, H.-T. Wang, and C. Heath Turner,* “Mechanism of bismuth telluride rxfoliation in an ionic liquid solvent,” Langmuir, vol. 31 (12), pp.3644-3652, 2015.
7. S. Ma, K. Anderson, L. Guo, A. Yousuf, E. C. Ellingsworth, C. Vajner, H.-T. Wang, * and G. Szulczewski,* "Temperature dependent thermopower and electrical conductivity of Te nanowire/poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) microribbons," Applied Physics Letters, vol. 105, pp. 073905, 2014.
8. P. Mao,# H. T. Wang,# P. D. Yang, and D. J. Wang,* "Multinozzle emitter arrays for nanoelectrospray mass spectrometry," Analytical Chemistry, vol. 83, pp. 6082-6089, 2011. (2012 R&D 100 Award)
9. J. Y. Tang,# H. T. Wang,# D. H. Lee, M. Fardy, Z. Y. Huo, T. P. Russell, and P. D. Yang,* "Holey silicon as an efficient thermoelectric material," Nano Letters, vol. 10, pp. 4279-4283, 2010.
10. H.-T. Wang, O. A. Nafday, J. R. Haaheim,* E. Tevaarwerk, N. A. Amro, R. G. Sanedrin, C.-Y. Chang, F. Ren, and S. J. Pearton, "Toward conductive traces®: Dip Pen Nanolithography of silver nanoparticle-based inks," Applied Physics Letters, vol. 93, pp. 143105-7, 2008.
11. H. T. Wang, B. S. Kang, F. Ren,* S. J. Pearton, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, and K. J. Linthicum, "Electrical detection of kidney injury molecule-1 with AlGaN/GaN high electron mobility transistors," Applied Physics Letters, vol. 91, pp. 222101-3, 2007. (Cover Article)
12. H. T. Wang, B. S. Kang, J. J. Chen, T. Anderson, S. Jang, F. Ren, H. S. Kim, Y. J. Li, D. P. Norton, and S. J. Pearton,* "Band-edge electroluminescence from N+ implanted bulk ZnO," Applied Physics Letters, vol. 88, pp.102107-9, 2006.
13. H. T. Wang, B. S. Kang, F. Ren, L. C. Tien, P. W. Sadik, D. P. Norton, S. J. Pearton,* and J. Lin, "Hydrogen-selective sensing at room temperature with ZnO nanorods," Applied Physics Letters, vol. 86, pp. 243503-5, 2005.