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付德君 ，武汉大学物理科学与技术学院教授。主要研究方向为加速器电镜联机及材料科学应用、DLC（类金刚石）、CN（氮化碳）、纳米晶复合材料、自旋电子学及铁和Free-standing GaN、宽禁带半导体。在Appl. Phys. Lett.和Phys. Rev. B等国际知名期刊上发表论文 50 余篇。他引近300次。首次采用光电化学方法制备GaN基MOS器件；率先用光化学方法形成GaN纳米金锥；首次在磁性半导体材料中观测到铁电存储特性。申请发明专利13项。
武汉大学物理科学与技术学院加速器实验室 教授
武大弘毅新材料有限公司 总工程师
电话/传真: 027-6875-3587
Email: djfu@whu.edu.cn
Home: www.acc-lab.whu.edu.cn
一、简 历
1981-1985， 武汉大学物理系,获理学学士学位
1985-1988， 武汉大学物理系，获理学硕士学位
1988-1996，三峡大学数理系，助教、讲师
1996-1999， 武汉大学物理系，获理学博士学位
1999-2002，（韩国）东国大学量子功能半导体研究中心，博士后fellow
从事GaN、MOS、纳米pyramid、磁性半导体的研究工作
2001-2004，（韩国）东国大学量子功能半导体中心，研究教授
2004年－今， 武汉大学物理学院加速器实验室，教授
从事离子束分析、原位探测技术、离子束材料合成与改性、宽禁带半导体、自旋电子学研究
二、科学研究与对外服务
1. 教育部留学归国人员启动基金：离子注入制备GaN、ZnO基磁性半导体
2. 国家自然科学基金重点项目：加速器-电镜联机及其在材料科学中的应用
3. 科技部中韩国际科技合作项目：在线离子束制备铁电铁磁性纳米结构器件及其原位离子束表征。以上项目主要成果如下：
- 国内第一套加速器-电镜联机装置
- 计算机扫描RBS/C系统
- 低能团簇负离子注入/沉积靶室，可用于graphene制备和超浅结研究
4. 国家发改委高新技术产业化示范工程：氮化碳超硬涂层技术产业化
5. 工信部国家科技重大专项：用于黑色金属加工的超细晶硬质合金涂层刀具
6. 科技部对俄科技合作专项：用于活塞环表面高性能涂层的环境友好PVD技术。以上项目主要成果如下：
- 高性能涂层系列：TiAlN, CrN, Ti-Si-N,DLC, TiAlCrN, TiAlSiN, TiAlCrSiN,纳米复合涂层等。应用范围：硬质合金刀具、微钻、微铣、发动机活塞环、模具、纺织钢领等工件的表面涂层
- 超厚与超硬涂层技术
- 环境友好型替代电镀铬新技术
7. 自主科研项目：穆斯堡尔谱与深空探测原位核分析技术
- 常规Mossbauer测试，低温Mossbauer谱
- RBS-PIXE-ERD与穆斯堡尔谱相结合的测试表征技术
- 铁基超导、多铁性材料及土壤分析
三、教学工作
大学物理学（本科生课程）
现代材料物理（研究生课程）
四、学术兼职
中国电工技术学会电子束离子束专业委员会 副主任委员
粒子加速器学会 理事
湖北省核学会 荣誉理事
湖北省太阳能研究会 副理事长
湖北省刀具协会 副理事长
《核技术》期刊 编委
Surf. Coat. Technol., J. Phys. D, Chinese Phys. Lett., Plasma. Sci. Technol., J. Alloys Compounds, J. American Ceramic Soc., J. Phys. Chem.等期刊评审人。
五、课题组成员
付德君（教授），郭立平（副教授），V. Pelenovich（博士后），陈义龙（教授，返聘），彭友贵（教授级高工，返聘），叶明生（实验师，返聘）
研究生：田灿鑫，王红军，王泽松，张早娣，闫少健，肖仁政，王世旭，卢志红，周霖，张瑞，王玲玲，林宝珠，尚艳霞，王薇，李银成，付酮程
六、合作伙伴
韩国东国大学，美国休斯顿大学，俄罗斯航空材料研究院，乌兹别克科学院
Dejun Fu, Professor
Tel/Fax: (86)-27-6875-3587
Email: djfu@whu.edu.cn
I. Education:
1981-1985, BSc, Department of Physics, Wuhan University.
1985-1988, MSc, Department of Physics, Wuhan University.
1996-1999, PhD, Accelerator Laboratory, Department of Physics, Wuhan University
II. Carrier:
1988-1996, Lecturer, Three Gorges University, Department of Physics.
1999-2001, Postdoc fellow, Quantum-Functional Semiconductor Research Center (QSRC), Dongguk University, Korea.
2001-2004, Research Professor, QSRC, Dongguk University, Korea.
2004-present, Professor, Accelerator Laboratory, School of Physics and Technology, Wuhan University.
III. Research interest：
1. Plasma-enhanced physical vapor deposition of hard coatings for industrial applications.
2. Magnetic semiconductors, multiferroic materials, and their application in spintronics and multibit memories.
3. Mossbauer spectroscopy of FeAs-based superconductors and other Fe-containing materials.
4. Hybrid and in situ analytical instrument and detection technologies.
IV. Group members：
Dejun Fu (professor), Liping Guo (associate professor, V. Pelenovich (postdoc).
Graduates: C.X. Tian, H.J. Wang, Z.S. Wang, Z.D. Zhang, S.J. Yan, R.Z. Xiao, S.X. Wang, Z.H. Lu, L. Zhou, R. Zhang, L.L. Wang, B.Z. Lin, Y.X. Shang，W. Wang, Y.C. Li, T.C. Fu
Emeritus: Y.L. Chen (professor), X.J. Fan (professor), Y.G. Peng (professor), J.R. Liu (professor), M.S. Ye (engineer)
V. Selected publications：
1. J. He, J. C. Lee, M. Li, Z. S. Wang, C. S. Liu, D. J. Fu, Computerized Control and Operation of Rutherford Backscattering/Channeling for an in situ Ion Beam System and Its Application for Measurement of Si(001) and ZnO(001), Chin. Phys. Lett. 28 (2011) 012901.
2. J. He, Z. S. Wang, M. Li, D. J. Fu, Structural and magnetic characterization of cobalt implanted GaN films, Nucl. Instr. Meth. B 269 (2011) 1041.
3. U. V. Valiev, J. B. Gruber, D. J. Fu, V. O. Pelenovich, G. W. Burdick, M. E. Malysheva, Specific features of Eu3+ and Tb3+ magnetooptics in gadolinium-gallium garnet, J. Rare Earth 29 (2011) 776.
4. C.W. Zou, H.J. Wang, M.L. Yi, M. Li, C.S. Liu, L.P. Guo, D.J. Fu, T.W. Kang, Defects related room temperature ferromagnetism in p-type (Mn, Li)-doped ZnO films deposited by reactive magnetron sputtering, Appl. Surf. Sci. 256 (2010) 2453.
5. M. Li, C. W. Zou, G. F. Wang, H. J. Wang, M. L. Yin, C. S. Liu, L. P. Guo, D. J. Fu, and T. W. Kang, Room temperature ferroelectric and magnetic properties of (Co, Li)-implanted ZnO films, J. Appl. Phys. 107 (2010) 104117.
6. X. W. Ke, F. K. Shan, G. F. Wang, C. S. Liu, D. J. Fu, Structural and Raman Analysis of Antimony-Implanted ZnMnO, Plasma Sci. Technol. 12 (2010) 92.
7. X. W. Ke, C. W. Zou, M. Li, C. S. Liu, L. P. Guo, D. J. Fu, Structure and Magnetic Properties of Mn-Implanted ZnO Films, Jpn. J. Appl. Phys. 49 (2010) 033001.
8. C. W. Zou, H. J. Wang, M. Li, Y. F. Yu, C. S. Liu, L. P. Guo, D.J. Fu, Characterization and properties of TiN-containing amorphous Ti–Si–N nanocomposite coatings prepared by arc assisted middle frequency magnetron sputtering, Vacuum 84 (2010) 817.
9. H. J. Wang, C. W. Zou, B. Yang, H. B. Lu, C. X. Tian, H. J. Yang, M. Li, C. S. Liu, D. J. Fu, J. R. Liu, Electrodeposition of tubular-rod structure gold nanowires using nanoporous anodic alumina oxide as template, Electrochem. Commun. 11 (2009) 2019.
10. C. W. Zou, H. J. Wang, M. L. Yin, M. Li, C. S. Liu, L. P. Guo, D. J. Fu, T. W. Kang, Preparation of GaN films on glass substrates by middle frequency magnetron sputtering, J. Crystal Growth 311 (2009) 223.
11. Z. T. Yang, B. Yang, L. P. Guo, D. J. Fu, Effect of bias voltage on the structure and hardness of Ti-Si-N composite coatings synthesized by cathodic arc assisted middle-frequency magnetron sputtering, J. Alloys Compounds 473 (2009) 437.
12. Z. T. Yang, B. Yang, L. P. Guo, D. J. Fu, Synthesis of Ti-Si-N nanocomposite coatings by a novel cathodic arc assisted middle-frequency magnetron sputtering, Appl. Surf. Sci. 255 (2009) 4720.
13. C. X. Tian, B. Yang, J. He, H. J. Wang, S. Q. Rong, C. W. Zou, C. S. Liu, L. P. Guo, D. J. Fu, Preparation of CrN thick films by high-rate middle-frequency unbalanced magnetron sputtering, Vacuum 83 (2009) 1459-1463.
14. M. L. Yin, M. Li, C. W. Zou, C. S. Liu, L. P. Guo, D. J. Fu, AlN films deposited by middle-frequency magnetron sputtering with and without anode-layer ion source assistance, J. Phys. D 41 (2008) 085407.
15. Y. H. Kwon, T. W. Kang, Y. Shon, H. Y. Cho, H. C. Jeon, Y. S. Park, D. U. Lee, T. W. Kim, D. J. Fu, Magnetic properties of Mn+-implanted and annealed Si1−xGex thin films grown on p-Si (100) substrates, Solid State Commun. 147 (2008) 161-164.
16. I. T. Yoon, C. J. Park, S. W. Lee, T. W. Kang, D. W. Koh, D. J. Fu, Ferromagnetism in self-assembled Ge quantum dots material followed by Mn implantation and annealing, Solid State Electronics 52 (2008) 871-876.
17. L. P. Guo, C. S. Liu, M. Li, B. Song, M. S. Ye, D. J. Fu, X. J. Fan, Establishment of in situ TEM-implanter/accelerator interface facility at Wuhan University, Nucl. Instr. Meth. A 586 (2008) 143.
18. Y. Shon, H. C. Jeon, S. J. Lee, C. S. Park, E. K. Kim, D. J. Fu, X. J. Fan, The appearance of clear ferromagnetism for p-type InMnP:Zn implanted with Mn of 1 at.%, Mater. Sci. Engr B 146 (2008) 220-224.
19. C. W. Zou, M. Li, M. L. Yin, D. J. Fu, GaN films deposited by middle-frequency magnetron sputtering, Appl. Surf. Sci. 253 (2007) 9077.
20. X. W. Ke, F. K. Shan, Y. S. Park, Y. J. Wang, D. J. Fu, Optical properties of antimony-implanted ZnO epilayers, Surf. Coat. Technol. 201 (2007) 6797.
21. L. Liao, H. B. Lu, J. C. Li, C. Liu, D. J. Fu et al, The sensitivity of gas sensor based on single ZnO nanowire modulated by helium ion radiation, Appl. Phys. Lett. 91 (2007) 173110.
22. M. L. Yin, C. W. Zou, D. J. Fu, Middle-frequency magnetron sputtering for GaN growth, Nucl. Instr. Meth. B 262 (2007) 189.
23. D. H. Kim, D. J. Lee, T. W. Kang, D. J. Fu, Ferroelectric and magnetic properties of CdMnS films prepared by co-evaporation, J. Appl. Phys. 101 (2007) 094111.
24. B. Yang, Z. H. Huang, C. S. Liu, Z. Y. Zeng, X. J. Fan, D. J. Fu, Characterization and properties of Ti-containing amorphous carbon nanocomposite coatings, Surf. Coat. Technol. 200 (2006) 5812.
25. Y. Shon, S. J. Lee, H. C. Jeon, T. W. Kang, D. J. Fu, Ferromagnetic formation of two phases MnP and InMn3 from InMnP:Zn, Appl. Phys. Lett. 88 (2006) 232511.
26. Y. Shon, S. J. Lee, H. C. Jeon, Y. S. Park, D. Y. Kim, T. W. Kang, J. S. Kim, E. K. Kim, D. J. Fu, X. J. Fan, Y. J. Park, Origin of clear ferromagnetism for p-type GaN implanted with Fe+ of 5-10 at%, Appl. Phys. Lett. 89 (2006) 082505.
27. I. T. Yoon, C. J. Park, T. W. Kang, D. J. Fu, Magnetic and transport properties of Mn-implanted Ge/Si quantum dots, Solid State Commun. 140 (2006) 185.
28. Z. H. Huang, B. Yang, C. S. Liu, X. J. Fan, D. J. Fu, Formation of C3N4 nanocrystals in Ti-doped CNx films prepared by arc-assisted MF magnetron sputtering, Jpn. J. Appl. Phys. 45 (2006) L562.
29. D. J. Fu and T. W. Kang, Gallium nitride pyramids fabricated by electroless etching, Jpn. J. Appl. Phys. 44 (2005) L342.
30. F. Ren, C. Z. Jiang, C. Liu, D. J. Fu, Y. Shi, Interface influence on the surface plasmon resonance of Ag nanocluster composite, Solid State Commun. 135 (2005) 268-272.
31. B. Yang, Z. H. Huang, C. S. Liu, Z. Y. Zeng, X. J. Fan, D. J. Fu, Ti-Containing Amorphous Carbon Nanocomposite Coatings Prepared by Means of Eight-Target Arc-Assisted Middle Frequency Magnetron Sputtering, Jpn. J. Appl. Phys. 44 (2005) 1022.
32. Y. S. Park, C. M. Park, D. J. Fu, T. W. Kang, J. E. Oh, Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy, Appl. Phys. Lett. 85 (2004) 5718.
33. Y. Shon, W. C. Lee, Y. S. Park, Y. H. Kwon, Seung Joo Lee, K. J. Chung, H. S. Kim, D. Y. Kim, D. J. Fu, Mn-implanted dilute magnetic semiconductor InP:Mn, Appl. Phys. Lett. 84 (2004) 2310.
34. Y. Shon, Y. H. Kwon, Y. S. Park, Y. Sh. Yuldashev, S. J. Lee, C. S. Park, K. J. Chung, S. J. Hoon, H. J. Kim, W. C. Lee, D. J. Fu, T. W. Kang, Ferromagnetic behavior of p-type GaN epilayer implanted with Fe ions, J. Appl. Phys. 95 (2004) 761.
35. M. K. Li, C. B. Li, C. S. Liu, X. J. Fan, D. J. Fu, Y. Shon, T. W. Kang, Optical and magnetic measurements of Mn+-implanted AlN, J. Appl. Phys. 95 (2004) 755.
36. Y. Shon, W. C. Lee, Y. S. Park, Y. H. Kwon, Seung Joo Lee, K. J. Chung, H. S. Kim, D. Y. Kim, D. J. Fu, T. W. Kang, X. J. Fan, Y. J. Park, Mn-implanted dilute magnetic semiconductor InP:Mn, Appl. Phys. Lett. 84 (2004) 2310.
37. D. J. Fu, J. C. Lee, S. W. Choi, C. S. Park, G. P. Panin, T. W. Kang, X. J. Fan, Ferroelectricity in Mn-implanted CdTe, Appl. Phys. Lett. 83 (2003) 2214.
38. D. J. Fu, J. C. Lee, S. W. Choi, S. J. Lee, T. W. Kang, M. S. Jang, H. I. Lee and Y. D. Woo, Study of ferroelectricity and current–voltage characteristics of CdZnTe, Appl. Phys. Lett. 81 (2002) 5207.
39. D. J. Fu and T. W. Kang, Electrical properties of GaN-based metal-oxide-semiconductor structures fabricated by photoelectrochemical oxidation, Jpn. J. Appl. Phys. 41 (2002) L1437.
40. D. J. Fu, Y. H. Kwon, T. W. Kang, C. J. Park, K. H. Baek, H. Y. Cho, D. H. Shin, C. H. Lee, GaN metal-oxide-semiconductor structures using Ga-oxide dielectrics formed by photoelectrochemical oxidation, Appl. Phys. Lett. 80 (2002) 446.
41. Y. H. Kwon, C. J. Park, W. C. Lee, D. J. Fu, Y. Shon, T. W. Kang, C. Y. Hong, H. Y. Cho, K. L. Wang, Memory effects related to deep levels in metal–oxide–semiconductor structure with nanocrystalline Si, Appl. Phys. Lett. 80 (2002) 2502.
42. Y. Shon, Y. H. Kwon, Sh. U. Yuldashev, J. H. Leem, C. S. Park, D. J. Fu, H. J. Kim, T. W. Kang, X. J. Fan, Optical and magnetic measurements of p-type GaN epilayers implanted with Mn ions, Appl. Phys. Lett. 81 (2002) 1845.
43. Y. Shon, Y. H. Kwon, D. Y. Kim, X. Fan, D. J. Fu, T. W. Kang, Magnetic Characteristic of Mn ion implanted GaN epilayer, Jpn. J. Appl. Phys. 40 (2001) 5304.
44. D. J. Fu, T. W. Kang, Sh. U. Yudalshev, N. H. Kim, S. H. Park, J. S. Yun, K. S. Chung, Effect of photoelectrochemical oxygenation on properties of GaN epilayers grown by MBE, Appl. Phys. Lett. 78 (2001) 1309.
45. D. J. Fu, Sh. U. Yudalshev, N. H. Kim, Y. S. Ryu, J. S. Yun, S. H. Park, T. W. Kang, A study of photoelectrochemical oxidation of GaN epilayers by extrinsic photoconductivity, Jpn. J. Appl. Phys. 40 (2001) L10.
46. D. J. Fu, Y. Y. Lei, J. C. Li, M. S. Ye, H. X. Guo, Y. G. Peng, X. J. Fan, Doping and photoelectric properties of C60 films prepared by ionized cluster beam deposition, Appl. Phys. A 67 (1998) 441.
47. D. W. Wu, Z. Zhang, D. J. Fu, X. J. Fan, Structure, electrical and chemical properties of ZrN deposited by dc reactive magnetron sputtering, Appl. Phys. A 64 (1997) 593.
48. D. W. Wu, D. J. Fu, H. X. Guo, Z. H. Zhang, X. Q. Meng, X. J. Fan, Structure and characteristics of C3N4 films prepared by rf plasma enhanced chemical vapor deposition, Phys. Rev. B 56 (1997) 4949.
49. S. C. Chen, H. Zhang, D. J. Fu, Boron implantation of diamond-like carbon films, Vacuum 39 (1989) 183.
50. C. S. Chen, D. J. Fu, H. Zhang, X. Z. Pan, A reaction sputtering type rf ion source for solid elements, Nucl. Instr. Meth. B 37-38 (1989) 136
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发表于 2017-3-22 10:26:26
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